Record beaten in stacking semiconductor transistors
The six stacks of semiconductors for hybrid, complementary metal-oxide semiconductor (CMOS) microchips advances miniaturisation.
KAUST scientists have achieved a recording in the stacking of semiconductor transistors
© KAUSTThis reportedly beats the original two-stack record, claim scientists at King Abdullah University of Science and Technology (KAUST), Saudi Arabia.
It could offer a new benchmark in integration density and efficiency, opening possibilities in electronic miniaturisation and performance.
Microchip fabrication often requires temperatures of several hundred degrees Celsius, which can damage the bottom layers of the chip as new ones are added.
In the KAUST process, no fabrication step exceeded 150oC, and most steps were completed at nearly room temperature, claim the researchers.
Modifications in the new design kept the surfaces smoother than previous processes as well.
'In microchip design, it is all about packing more power in less space. By refining multiple steps in the fabrication, we provide a blueprint for scaling vertically and increasing functional density far beyond today's limits,' says Postdoctoral Researcher Saravanan Yuvaraja, first author of the paper KAUST.
